APTGF150A120T3AG
IGBT MODULE 1200V 210A 1041W SP3Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APTGF150A120T3AG is an NPT Half Bridge IGBT Module designed for high-power applications. This module features a robust 1200 V collector-emitter breakdown voltage and a maximum collector current of 210 A. With a maximum power dissipation of 1041 W, it is suitable for demanding power conversion tasks. The device offers a low Vce(on) of 3.7 V at 15 V gate-emitter voltage and 150 A collector current, minimizing conduction losses. Input capacitance (Cies) is specified at 9.3 nF at 25 V. The module includes an integrated NTC thermistor for thermal monitoring. Its SP3 package with chassis mount facilitates efficient heat dissipation in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | - |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 150A |
| NTC Thermistor | Yes |
| Supplier Device Package | SP3 |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 210 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1041 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 9.3 nF @ 25 V |
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