Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

APTCV40H60CT1G

Banner
productimage

APTCV40H60CT1G

IGBT MODULE 600V 80A 176W SP1

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

Microchip Technology APTCV40H60CT1G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module. This full bridge configuration offers a 600 V collector-emitter breakdown voltage and a maximum collector current of 80 A. The module features a low on-state voltage of 1.9 V at 15 V gate-emitter voltage and 50 A collector current, with a maximum power dissipation of 176 W. Input capacitance (Cies) is 3.15 nF at 25 V. Designed for chassis mounting, this device includes an integrated NTC thermistor for temperature monitoring. The operating temperature range is -40°C to 150°C (TJ). Applications include industrial motor drives, power supplies, and renewable energy systems. This component is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSP1
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 50A
NTC ThermistorYes
Supplier Device PackageSP1
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max176 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce3.15 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
APT150GT120JR

IGBT MOD 1200V 170A 830W ISOTOP

product image
APTGT225A170G

IGBT MODULE 1700V 340A 1250W SP6

product image
APT50GLQ65JU2

IGBT MODULE 650V 80A 220W ISOTOP