APT75GT120JU2
IGBT MOD 1200V 100A 416W SOT227Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APT75GT120JU2 is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module. This component features a maximum collector-emitter voltage of 1200 V and a continuous collector current capability of 100 A. The IGBT module offers a maximum power dissipation of 416 W and a typical gate-emitter voltage for turn-on of 15 V, with a specified on-state voltage (Vce(on)) of 2.1 V at 75 A. Input capacitance (Cies) is 5.34 nF at 25 V. The device operates within an ambient temperature range of -55°C to 150°C. It is housed in an SOT-227 package, also known as ISOTOP, designed for chassis mounting. This IGBT module is suitable for applications in power conversion, motor drives, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | SOT-227 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 416 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 5.34 nF @ 25 V |
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