APT75GN120JDQ3
IGBT MOD 1200V 124A 379W ISOTOPManufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APT75GN120JDQ3 is a single-configuration Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This Trench Field Stop IGBT features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 124 A. The module dissipates up to 379 W and has a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 75A collector current. Input capacitance (Cies) is specified at 4.8 nF @ 25 V. It is housed in an ISOTOP package for efficient thermal management and is designed for chassis mounting. This component is suitable for use in industrial power supplies, motor drives, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | ISOTOP® |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 124 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 379 W |
| Current - Collector Cutoff (Max) | 200 µA |
| Input Capacitance (Cies) @ Vce | 4.8 nF @ 25 V |
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