APT50GF120JRDQ3
IGBT MOD 1200V 120A 521W ISOTOPManufacturer: Microchip Technology
Categories: IGBT Modules
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The Microchip Technology APT50GF120JRDQ3 is a single NPT IGBT module designed for high-power applications. This chassis mount device features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 120 A, with a Vce(on) of 3V at 15V gate-emitter voltage and 75A collector current. It offers a continuous collector current cutoff of 750 µA and a maximum power dissipation of 521 W. The module boasts low input capacitance (Cies) of 5.32 nF at 25 V. Operating across a temperature range of -55°C to 150°C, it utilizes the ISOTOP® package. This component is suitable for use in industrial motor drives, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | ISOTOP® |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 521 W |
| Current - Collector Cutoff (Max) | 750 µA |
| Input Capacitance (Cies) @ Vce | 5.32 nF @ 25 V |
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