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APT50GF120JRDQ3

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APT50GF120JRDQ3

IGBT MOD 1200V 120A 521W ISOTOP

Manufacturer: Microchip Technology

Categories: IGBT Modules

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The Microchip Technology APT50GF120JRDQ3 is a single NPT IGBT module designed for high-power applications. This chassis mount device features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 120 A, with a Vce(on) of 3V at 15V gate-emitter voltage and 75A collector current. It offers a continuous collector current cutoff of 750 µA and a maximum power dissipation of 521 W. The module boasts low input capacitance (Cies) of 5.32 nF at 25 V. Operating across a temperature range of -55°C to 150°C, it utilizes the ISOTOP® package. This component is suitable for use in industrial motor drives, renewable energy systems, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseISOTOP
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic3V @ 15V, 75A
NTC ThermistorNo
Supplier Device PackageISOTOP®
IGBT TypeNPT
Current - Collector (Ic) (Max)120 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max521 W
Current - Collector Cutoff (Max)750 µA
Input Capacitance (Cies) @ Vce5.32 nF @ 25 V

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