APT35GT120JU2
IGBT MOD 1200V 55A 260W SOT227Manufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APT35GT120JU2 is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module. This component is rated for a collector-emitter breakdown voltage of 1200 V and a continuous collector current of up to 55 A. The maximum power dissipation is 260 W. The Vce(on) is specified at 2.1V maximum for a gate-emitter voltage of 15V and a collector current of 35A. Input capacitance (Cies) is 2.53 nF at 25V. The module features a chassis mount package, SOT-227 (ISOTOP), and operates within a temperature range of -55°C to 150°C. This IGBT module is suitable for applications in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
| NTC Thermistor | No |
| Supplier Device Package | SOT-227 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 260 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 2.53 nF @ 25 V |
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