Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

APT200GT60JR

Banner
productimage

APT200GT60JR

IGBT MOD 600V 195A 500W SOT227

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

Microchip Technology's APT200GT60JR is a high-performance NPT single IGBT module from the Thunderbolt IGBT® series, housed in a SOT-227 package for chassis mounting. This component offers a robust 600V collector-emitter breakdown voltage and a substantial 195A collector current capability, supporting up to 500W of power dissipation. Key electrical characteristics include a maximum Vce(on) of 2.5V at 15V gate-emitter voltage and 200A collector current, and an input capacitance (Cies) of 8.65 nF at 25V. The module operates within a temperature range of -55°C to 150°C (TJ). Its compact design and reliable performance make it suitable for applications in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 200A
NTC ThermistorNo
Supplier Device PackageSOT-227
IGBT TypeNPT
Current - Collector (Ic) (Max)195 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max500 W
Current - Collector Cutoff (Max)25 µA
Input Capacitance (Cies) @ Vce8.65 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
APT25GT120BRG

IGBT NPT 1200V 54A TO247

product image
APT50GT120B2RG

IGBT NPT 1200V 94A TO247

product image
APT40GT60BRG

IGBT NPT 600V 80A TO247