APT150GN120JDQ4
IGBT MOD 1200V 215A 625W ISOTOPManufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology APT150GN120JDQ4 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This single-configuration module features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 215 A. The Vce(on) is specified at 2.1V at 15V gate-emitter voltage and 150A collector current, with a power dissipation capability of 625 W. It utilizes the ISOTOP® package for efficient thermal management and chassis mounting. The input capacitance (Cies) is 9.5 nF at 25 V. This component is suitable for industrial motor drives, power supplies, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 150A |
| NTC Thermistor | No |
| Supplier Device Package | ISOTOP® |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 215 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 625 W |
| Current - Collector Cutoff (Max) | 300 µA |
| Input Capacitance (Cies) @ Vce | 9.5 nF @ 25 V |
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