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APT150GN120J

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APT150GN120J

IGBT MOD 1200V 215A 625W ISOTOP

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

The Microchip Technology APT150GN120J is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power applications. This component features a robust 1200 V collector-emitter breakdown voltage and a high continuous collector current capability of 215 A. With a maximum power dissipation of 625 W, it is engineered for thermal efficiency and reliability. The module exhibits a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 150A collector current, minimizing conduction losses. Input capacitance (Cies) is specified at 9.5 nF at 25 V. The APT150GN120J is housed in an ISOTOP® package for efficient chassis mounting and operation across a wide temperature range of -55°C to 150°C. This IGBT module finds application in industrial motor drives, power supplies, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseISOTOP
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 150A
NTC ThermistorNo
Supplier Device PackageISOTOP®
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)215 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max625 W
Current - Collector Cutoff (Max)100 µA
Input Capacitance (Cies) @ Vce9.5 nF @ 25 V

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