APT150GN120J
IGBT MOD 1200V 215A 625W ISOTOPManufacturer: Microchip Technology
Categories: IGBT Modules
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The Microchip Technology APT150GN120J is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power applications. This component features a robust 1200 V collector-emitter breakdown voltage and a high continuous collector current capability of 215 A. With a maximum power dissipation of 625 W, it is engineered for thermal efficiency and reliability. The module exhibits a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 150A collector current, minimizing conduction losses. Input capacitance (Cies) is specified at 9.5 nF at 25 V. The APT150GN120J is housed in an ISOTOP® package for efficient chassis mounting and operation across a wide temperature range of -55°C to 150°C. This IGBT module finds application in industrial motor drives, power supplies, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 150A |
| NTC Thermistor | No |
| Supplier Device Package | ISOTOP® |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 215 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 625 W |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 9.5 nF @ 25 V |
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