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APT100GT120JR

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APT100GT120JR

IGBT MOD 1200V 123A 570W ISOTOP

Manufacturer: Microchip Technology

Categories: IGBT Modules

Quality Control: Learn More

Microchip Technology's APT100GT120JR is a Thunderbolt IGBT® module featuring NPT technology. This single-configuration device is rated for a 1200 V collector-emitter breakdown voltage and a maximum collector current of 123 A. With a maximum power dissipation of 570 W, it is designed for demanding applications. The module exhibits a Vce(on) of 3.7V at 15V Vge and 100A Ic, with a typical input capacitance (Cies) of 6.7 nF at 25 V. This chassis mount component, packaged in SOT-227-4 miniBLOC, operates across an extended temperature range from -55°C to 150°C (TJ). The APT100GT120JR is suitable for power conversion systems in industrial, automotive, and renewable energy sectors.

Additional Information

Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageISOTOP®
IGBT TypeNPT
Current - Collector (Ic) (Max)123 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max570 W
Current - Collector Cutoff (Max)100 µA
Input Capacitance (Cies) @ Vce6.7 nF @ 25 V

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