APT100GT120JR
IGBT MOD 1200V 123A 570W ISOTOPManufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology's APT100GT120JR is a Thunderbolt IGBT® module featuring NPT technology. This single-configuration device is rated for a 1200 V collector-emitter breakdown voltage and a maximum collector current of 123 A. With a maximum power dissipation of 570 W, it is designed for demanding applications. The module exhibits a Vce(on) of 3.7V at 15V Vge and 100A Ic, with a typical input capacitance (Cies) of 6.7 nF at 25 V. This chassis mount component, packaged in SOT-227-4 miniBLOC, operates across an extended temperature range from -55°C to 150°C (TJ). The APT100GT120JR is suitable for power conversion systems in industrial, automotive, and renewable energy sectors.
Additional Information
Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | ISOTOP® |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 123 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 570 W |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 6.7 nF @ 25 V |