APT100GN120JDQ4
IGBT MOD 1200V 153A 446W ISOTOPManufacturer: Microchip Technology
Categories: IGBT Modules
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Microchip Technology's APT100GN120JDQ4 is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 153 A. With a maximum power dissipation of 446 W and a Vce(on) of 2.1 V at 15 V, 100 A, it offers efficient power handling. The module is housed in a SOT-227-4, miniBLOC package, utilizing the ISOTOP® package for enhanced thermal performance and ease of chassis mounting. Operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | ISOTOP® |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 153 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 446 W |
| Current - Collector Cutoff (Max) | 200 µA |
| Input Capacitance (Cies) @ Vce | 6.5 nF @ 25 V |