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APT100GN120JDQ4

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APT100GN120JDQ4

IGBT MOD 1200V 153A 446W ISOTOP

Manufacturer: Microchip Technology

Categories: IGBT Modules

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Microchip Technology's APT100GN120JDQ4 is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This component features a 1200 V collector-emitter breakdown voltage and a maximum collector current of 153 A. With a maximum power dissipation of 446 W and a Vce(on) of 2.1 V at 15 V, 100 A, it offers efficient power handling. The module is housed in a SOT-227-4, miniBLOC package, utilizing the ISOTOP® package for enhanced thermal performance and ease of chassis mounting. Operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in power factor correction, industrial motor drives, and uninterruptible power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageISOTOP®
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)153 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max446 W
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce6.5 nF @ 25 V

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