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SST29EE010-70-4I-NHE

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SST29EE010-70-4I-NHE

Flash, 128KX8, 70ns, PQCC32

Manufacturer: Microchip Technology

Categories: Flash Memories

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The Microchip Technology SST29EE010-70-4I-NHE is a 1 Mbit parallel NOR Flash memory device organized as 128K words by 8 bits. Featuring an access time of 70ns, this component operates asynchronously and utilizes CMOS technology. It supports a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V, and requires a programming voltage of 5V. The SST29EE010 series operates across an industrial temperature range of -40°C to +85°C. This device is housed in a 32-terminal PQCC package with J-bend terminals. Key specifications include a write cycle time maximum of 10µs. Applications for this memory technology span industrial control, networking equipment, and consumer electronics where reliable non-volatile data storage is critical.

Additional Information

Series: SST29EE010RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length13.9700
TypeNOR TYPE
Width11.4300
TechnologyCMOS
Access_Time_Max70.0000000000000000
JESD_30_CodeR-PQCC-J32
Memory_Density1048576.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals32
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Parallel_SerialParallel
Programming_Voltage5
Seated_Height_Max3.5560
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD
Write_Cycle_Time_Max_tWC10.0000000000000000

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