SST29EE010-70-4I-EHE
Flash, 128KX8, 70ns, PDSO32Manufacturer: Microchip Technology
Categories: Flash Memories
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Microchip Technology's SST29EE010 series offers a 1 Mbit (128K x 8) parallel NOR Flash memory device. The SST29EE010-70-4I-EHE features a fast 70ns access time and operates from a 4.5V to 5.5V supply range. This device is suitable for a wide array of embedded applications, including industrial control systems, consumer electronics, and automotive electronics, where reliable non-volatile data storage is critical. Its CMOS technology ensures low power consumption. The memory organization of 128K words by 8 bits provides efficient data storage. Packaged in a 32-lead TSOP (Thin Small Outline Package) with a 0.5mm terminal pitch, it supports surface mounting. The operating temperature range is -40°C to +85°C, making it robust for demanding environments. Write cycle time is a maximum of 10ms.
Additional Information
Series: SST29EE010RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 18.4000 |
| Type | NOR TYPE |
| Width | 8.0000 |
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| JESD_30_Code | R-PDSO-G32 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | FLASH |
| Memory_Organization | 128KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 131072.0000000000000000 |
| Number_of_Words_Code | 128K |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP1 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Parallel_Serial | Parallel |
| Programming_Voltage | 5 |
| Seated_Height_Max | 1.2000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.500 |
| Terminal_Position | Dual |
| Write_Cycle_Time_Max_tWC | 10.0000000000000000 |
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