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Field Programmable Gate Arrays

RTSX72SUCG624EV

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RTSX72SUCG624EV

Field Programmable Gate Array, 6036 CLBs, 108000 Gates, 310MHz, 6036-Cell, CMOS, CPGA624

Manufacturer: Microchip Technology

Categories: Field Programmable Gate Arrays

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Microchip Technology RTSX72SUCG624EV is a Field Programmable Gate Array from the RTSX72 series. This CMOS device offers 6036 CLBs and 108,000 equivalent gates, with 72,000 typical gates available for design implementation. It operates at a maximum clock frequency of 310 MHz and features a combinatorial delay of 1.4 ns per CLB. The RTSX72SUCG624EV is housed in a 624-terminal ceramic cofired grid array package (CPGA624) with a terminal pitch of 1.27 mm. Designed for harsh environments, it meets MIL-PRF-38535 Class V screening, with a total dose capability of 100k Rad(Si) and an operating temperature range of -55°C to 125°C. Applications include aerospace, defense, and high-reliability industrial systems. The supply voltage ranges from 2.25V to 2.75V nominal 2.5V.

Additional Information

Series: RTSX72RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length32.5000
Width32.5000
TechnologyCMOS
Additional_Feature72000 TYPICAL GATES AVAILABLE
Clock_Frequency_Max310.00000
Combinatorial_Delay_of_a_CLB_Max1.4000000000000000
JESD_30_CodeS-CPGA-X624
Number_of_CLBs6036
Number_of_Equivalent_Gates108000
Number_of_Inputs360
Number_of_Logic_Cells6036
Number_of_Outputs360
Number_of_Terminals624
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Organization6036 CLBS, 108000 GATES
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeCGA
Package_Equivalence_CodeCGA624,25X25,50
Package_ShapeSquare
Package_StyleGRID ARRAY
Programmable_Logic_TypeFIELD PROGRAMMABLE GATE ARRAY
Screening_Level_Reference_StandardMIL-PRF-38535 Class V
Seated_Height_Max5.4100
Supply_Voltage_Max2.75000
Supply_Voltage_Min2.25000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormUNSPECIFIED
Terminal_Pitch1.270
Terminal_PositionPerpendicular
Total_Dose100k Rad(Si)

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