

Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 116W (Tc), 196W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc), 49A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 838pF @ 1000V, 1990pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 20V, 137nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA, 2.7V @ 2mA |
| Supplier Device Package | - |