

Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Three Level Inverter) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.846kW (Tc), 1.161kW (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV), 700V |
| Current - Continuous Drain (Id) @ 25°C | 472A (Tc), 442A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 18100pF @ 1000V, 18000pF @ 700V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 1392nC @ 20V, 860nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.8V @ 18mA, 2.4V @ 16mA |
| Supplier Device Package | - |