MSCSM120HM083AG
SIC 4N-CH 1200V 251AManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 1200V (1.2kV) 251A (Tc) 1.042kW (Tc) Chassis Mount
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.042kW (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 251A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 120A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 696nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.8V @ 9mA |
| Supplier Device Package | - |
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