MSCMC120AM07CT6LIAG
SIC 2N-CH 1200V 264A SP6C LIManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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This Microchip Technology Silicon Carbide (SiC) MOSFET array, part number MSCMC120AM07CT6LIAG, offers a 1200V (1.2kV) Drain-to-Source voltage (Vdss) and 264A continuous drain current (Id) at 25°C, with a maximum power dissipation of 1350W (Tc). Featuring a 2 N-Channel configuration in a phase leg arrangement, this device exhibits a low on-resistance of 8.7mOhm at 240A and 20V. Key parameters include a gate charge (Qg) of 690nC @ 20V and input capacitance (Ciss) of 11400pF @ 1000V. The MOSFET array is designed for chassis mounting and operates within a temperature range of -40°C to 175°C (TJ). The SP6C LI module package is suitable for demanding applications in electric vehicle powertrains, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1350W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 264A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 11400pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 240A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 690nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 60mA |
| Supplier Device Package | SP6C LI |
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