MSCMC120AM04CT6LIAG
SIC 2N-CH 1200V 388A SP6C LIManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology presents the MSCMC120AM04CT6LIAG, a Silicon Carbide (SiC) MOSFET array featuring a 1200V (1.2kV) drain-to-source voltage (Vdss) and 388A continuous drain current (Id) at 25°C (Tc). This module offers a low on-resistance of 5.7mOhm at 300A and 20V (Vgs), with a maximum power dissipation of 1754W (Tc). The device is configured as a 2 N-channel phase leg, utilizing a SP6C LI supplier device package suitable for chassis mounting. Key parameters include a gate charge (Qg) of 966nC at 20V and input capacitance (Ciss) of 16700pF at 1000V. The operating temperature range is -40°C to 175°C (TJ). This component is engineered for demanding applications in electric vehicle powertrains, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1754W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 388A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 16700pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 300A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 966nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 90mA |
| Supplier Device Package | SP6C LI |
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