MSCMC120AM03CT6LIAG
SIC 2N-CH 1200V 631A SP6C LIManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Microchip Technology MSCMC120AM03CT6LIAG is a 2 N-channel Silicon Carbide (SiC) MOSFET array featuring a 1200V (1.2kV) drain-source voltage. This module is designed for chassis mounting and offers a continuous drain current (Id) of 631A at 25°C (Tc) with a maximum power dissipation of 2778W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 3.4mOhm at 500A, 20V, and a gate charge (Qg) of 1610nC at 20V. Input capacitance (Ciss) is specified at a maximum of 27900pF at 1000V. The device operates within an ambient temperature range of -40°C to 175°C (TJ). This component is utilized in applications requiring high power density and efficiency, such as electric vehicle powertrains and industrial motor control. The supplier device package is SP6C LI.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 2778W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 631A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 27900pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 500A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 1610nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 150mA |
| Supplier Device Package | SP6C LI |
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