MSCMC120AM02CT6LIAG
SIC 2N-CH 1200V 742A SP6C LIManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology's MSCMC120AM02CT6LIAG is a Silicon Carbide (SiC) MOSFET array featuring two N-channel power transistors configured as a phase leg. This module is designed for high-power applications, boasting a Drain-to-Source Voltage (Vdss) of 1200V and a continuous Drain Current (Id) capability of 742A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 2.85mOhm at 600A and 20V, with a maximum power dissipation of 3200W (Tc). Key parameters include a Gate Charge (Qg) of 1932nC (Max) at 20V and an Input Capacitance (Ciss) of 33500pF (Max) at 1000V. The threshold voltage (Vgs(th)) is rated at 4V (Max) for 180mA. This chassis-mount module operates across a temperature range of -40°C to 175°C (TJ) and is supplied in a SP6C LI package. Applications include industrial motor drives, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 3200W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 742A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 33500pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 2.85mOhm @ 600A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 1932nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 180mA |
| Supplier Device Package | SP6C LI |
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