MSCM20XM10T3XG
MOSFET 6N-CH 200V 108A SP3XManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology's MSCM20XM10T3XG is a 6-channel N-channel MOSFET module designed for high-power applications. This device features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 108A at 25°C (Tc), with a maximum power dissipation of 341W (Tc). The low on-resistance of 9.7mOhm at 81A and 10V (Vgs) minimizes conduction losses. The module's configuration includes a 3-phase bridge arrangement, facilitating efficient power conversion. Key parameters include a gate charge (Qg) of 161nC at 10V and input capacitance (Ciss) of 10700pF at 50V. The MSCM20XM10T3XG is equipped with a chassis mount for effective thermal management and operates within an ambient temperature range of -40°C to 125°C (Tc). This component is suitable for use in industrial motor control and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 341W (Tc) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 10700pF @ 50V |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 81A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 161nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SP3X |
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