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LP1030DK1-G

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LP1030DK1-G

MOSFET 2P-CH 300V SOT23-5

Manufacturer: Microchip Technology

Categories: FET, MOSFET Arrays

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Microchip Technology's LP1030DK1-G is a dual P-channel MOSFET array housed in a SOT-23-5 package. This surface-mount component offers a drain-to-source voltage (Vdss) of 300V. Key electrical specifications include a maximum on-resistance (Rds On) of 180 Ohms at 20mA and 7V, and a gate threshold voltage (Vgs(th)) of 2.4V at 1mA. Input capacitance (Ciss) is specified at a maximum of 10.8pF at 25V. The device operates within a temperature range of -25°C to 125°C. This MOSFET array is suitable for applications in power management and switching circuits across various industrial sectors. The component is supplied on a tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74A, SOT-753
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-25°C ~ 125°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max-
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C-
Input Capacitance (Ciss) (Max) @ Vds10.8pF @ 25V
Rds On (Max) @ Id, Vgs180Ohm @ 20mA, 7V
Gate Charge (Qg) (Max) @ Vgs-
FET Feature-
Vgs(th) (Max) @ Id2.4V @ 1mA
Supplier Device PackageSOT-23-5

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