LN100LA-G
MOSFET 2N-CH 1200V 6LFGAManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Microchip Technology LN100LA-G is a 1200V (1.2kV) N-Channel MOSFET array designed for surface mount applications. This component, packaged in a 6-LFGA (3x3) format and supplied on tape and reel, features a cascoded configuration. The Drain to Source Voltage (Vdss) is rated at 1200V, with a maximum power dissipation of 350mW. Key electrical parameters include an input capacitance (Ciss) of 50pF at 25V and a threshold voltage (Vgs(th)) of 1.6V at 10µA. The Rds On is specified at 3000 Ohms maximum at 2mA and 2.8V. This device operates within a temperature range of -25°C to 125°C. It finds application in power management and high-voltage switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VFLGA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Cascoded) |
| Operating Temperature | -25°C ~ 125°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 350mW |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Rds On (Max) @ Id, Vgs | 3000Ohm @ 2mA, 2.8V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.6V @ 10µA |
| Supplier Device Package | 6-LFGA (3x3) |
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