APTMC170AM60CT1AG
SIC 2N-CH 1700V 50A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTMC170AM60CT1AG is a Silicon Carbide (SiC) MOSFET array featuring a 2 N-channel configuration in a phase leg arrangement. This component offers a high drain-to-source voltage (Vdss) of 1700V (1.7kV) and a continuous drain current (Id) capability of 50A at 25°C (Tc). With a low on-resistance (Rds On) of 60mOhm at 50A and 20V, it is designed for efficient power switching. The device has a maximum power dissipation of 350W and a gate charge (Qg) of 190nC at 20V. Input capacitance (Ciss) is specified at 3080pF maximum at 1000V. This chassis-mount component operates within an industrial temperature range of -40°C to 150°C (TJ). The APTMC170AM60CT1AG is suitable for applications in electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 350W |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 3080pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 50A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 190nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.3V @ 2.5mA (Typ) |
| Supplier Device Package | SP1 |
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