APTMC120TAM34CT3AG
SIC 6N-CH 1200V 74A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology's APTMC120TAM34CT3AG is a Silicon Carbide (SiC) 6-channel N-channel MOSFET array designed for high-power applications. This module features a 1200V (1.2kV) drain-source voltage (Vdss) and a continuous drain current (Id) of 74A at 25°C (Tc). The device offers a low on-resistance of 34mOhm maximum at 50A and 20V, with a maximum power dissipation of 375W. Key electrical characteristics include a gate charge (Qg) of 161nC at 5V and an input capacitance (Ciss) of 2788pF at 1000V. The APTMC120TAM34CT3AG is packaged in a chassis mount module suitable for demanding thermal management. Operating temperature ranges from -40°C to 175°C (TJ). This component is utilized in industries such as electric vehicle charging, industrial motor drives, and power grid infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 375W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2788pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 161nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Supplier Device Package | SP3 |
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