APTMC120TAM12CTPAG
SIC 6N-CH 1200V 220A SP6-PManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTMC120TAM12CTPAG is a Silicon Carbide (SiC) 6 N-Channel MOSFET array designed for high-power applications. This component features a 1200V (1.2kV) drain-to-source voltage and a continuous drain current of 220A (Tc) at 25°C, with a maximum power dissipation of 925W. The ON-resistance (Rds On) is specified at 12mOhm at 150A and 20V. The device has a gate charge (Qg) of 483nC (Max) at 20V and input capacitance (Ciss) of 8400pF (Max) at 1000V. The APTMC120TAM12CTPAG utilizes a 3-phase bridge configuration and is housed in a Chassis Mount SP6-P package. It operates within a temperature range of -40°C to 150°C (TJ). This SiC MOSFET array is suitable for demanding applications in industries such as electric vehicles, renewable energy systems, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 925W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 150A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 483nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 30mA (Typ) |
| Supplier Device Package | SP6-P |
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