APTMC120AM55CT1AG
MOSFET 2N-CH 1200V 55A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Microchip Technology APTMC120AM55CT1AG is a 1200V (1.2kV) N-channel Silicon Carbide (SiC) MOSFET array designed for high-power applications. This component features a continuous drain current (Id) of 55A (Tc) at 25°C and a maximum power dissipation of 250W. The APTMC120AM55CT1AG offers a low on-resistance of 49mOhm at 40A, 20V, and a gate charge (Qg) of 98nC at 20V. Input capacitance (Ciss) is rated at 1900pF at 1000V. The device is configured as a 2 N-Channel half bridge and is housed in a chassis mount SP1 package. Operating temperature ranges from -40°C to 150°C (TJ). This component is suitable for use in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 40A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 2mA (Typ) |
| Supplier Device Package | SP1 |
Request a Quote
Clients Also Buy
MSCSM120AM027T6AG
SIC 2N-CH 1200V 733A
MSCSM120AM31CTBL1NG
SIC 2N-CH 1200V 79A
MSCMC170AM08CT6LIAG
SIC 2N-CH 1700V 280A SP6C LI
