APTMC120AM20CT1AG
MOSFET 2N-CH 1200V 143A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTMC120AM20CT1AG is a 1200V Silicon Carbide (SiC) MOSFET array featuring two N-channel devices in a phase-leg configuration. This component is rated for a continuous drain current of 143A (Tc) and offers a low Rds(on) of 17mOhm at 100A, 20V. With a maximum power dissipation of 600W and a junction temperature range of -40°C to 150°C, it is suitable for demanding applications. Key electrical parameters include a Vgs(th) of 2.3V (Typ), Gate Charge (Qg) of 360nC (Max) @ 20V, and Input Capacitance (Ciss) of 5960pF (Max) @ 1000V. The APTMC120AM20CT1AG is supplied in an SP1 package for chassis mounting, with packaging in bulk. This device is commonly utilized in power conversion systems across industries such as industrial automation, electric vehicles, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 600W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 143A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 5960pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 100A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 360nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.3V @ 2mA (Typ) |
| Supplier Device Package | SP1 |
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