APTMC120AM12CT3AG
SIC 2N-CH 1200V 220A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTMC120AM12CT3AG is a Silicon Carbide (SiC) MOSFET array featuring a 2 N-channel phase leg configuration. This component offers a 1200V (1.2kV) drain-to-source voltage and a continuous drain current capability of 220A (Tc) at 25°C. The device boasts a low on-resistance of 12mOhm maximum at 150A and 20V. Key parameters include gate charge (Qg) of 483nC at 20V and input capacitance (Ciss) of 8400pF at 1000V. With a maximum power dissipation of 925W, this chassis mount device is designed for demanding applications in electric vehicle powertrains and industrial motor drives. The APTMC120AM12CT3AG operates within a temperature range of -40°C to 150°C (TJ) and is supplied in Bulk packaging within an SP3 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Phase Leg) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 925W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 150A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 483nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 30mA (Typ) |
| Supplier Device Package | SP3 |
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