APTMC120AM08CD3AG
MOSFET 2N-CH 1200V 250A D3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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The Microchip Technology APTMC120AM08CD3AG is a Silicon Carbide (SiC) MOSFET designed for high-power applications. This 2 N-Channel device features a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 250A at 25°C (Tc). With a low on-resistance (Rds On) of 10mOhm at 200A and 20V, it offers efficient power handling up to 1100W. Key parameters include gate charge (Qg) of 490nC at 20V and input capacitance (Ciss) of 9500pF at 1000V. The APTMC120AM08CD3AG is housed in a D3 module for chassis mounting and operates within a temperature range of -40°C to 150°C (TJ). This component is suitable for use in industries such as electric vehicles, renewable energy, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D-3 Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1100W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 250A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 9500pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 200A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 490nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 10mA (Typ) |
| Supplier Device Package | D3 |
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