APTM60H23FT1G
MOSFET 4N-CH 600V 20A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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This Microchip Technology APTM60H23FT1G is a 4 N-Channel MOSFET array designed for high-voltage applications. With a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C, this component is suited for demanding power conversion tasks. The low Rds On of 276mOhm at 17A and 10V, combined with a maximum power dissipation of 208W, ensures efficient operation. Featuring a gate charge (Qg) of 165nC and input capacitance (Ciss) of 5316pF, it facilitates robust switching performance. The device is housed in a Chassis Mount SP1 package for thermal management and is rated for operation between -40°C and 150°C. This MOSFET array finds application in power supply units and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 208W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 5316pF @ 25V |
| Rds On (Max) @ Id, Vgs | 276mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | SP1 |
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