APTM60A11FT1G
MOSFET 2N-CH 600V 40A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM60A11FT1G is a 600V, 40A N-channel MOSFET array in a Chassis Mount SP1 package. This device offers a continuous drain current of 40A at 25°C and a maximum power dissipation of 390W. Key electrical specifications include a Drain to Source Voltage (Vdss) of 600V, Rds On (Max) of 132mOhm at 33A and 10V, and a Gate Charge (Qg) of 330nC at 10V. Input Capacitance (Ciss) is a maximum of 10552pF at 25V. With an operating temperature range of -40°C to 150°C (TJ), this MOSFET array is suitable for various power conversion applications in industrial and automotive sectors. The device is provided in Bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Input Capacitance (Ciss) (Max) @ Vds | 10552pF @ 25V |
| Rds On (Max) @ Id, Vgs | 132mOhm @ 33A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 330nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP1 |
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