APTM50HM75SCTG
MOSFET 4N-CH 500V 46A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM50HM75SCTG is a 4 N-channel Silicon Carbide (SiC) MOSFET array configured as a full bridge. This component offers a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 46A at 25°C. The device features a low on-resistance (Rds On) of 90mOhm at 23A and 10V, with a maximum power dissipation of 357W. Key gate characteristics include a gate charge (Qg) of 123nC at 10V and input capacitance (Ciss) of 5590pF at 25V. The threshold voltage (Vgs(th)) is 5V at 2.5mA. Designed for chassis mounting, this array operates within a temperature range of -40°C to 150°C (TJ). The APTM50HM75SCTG is supplied in an SP4 package and is suitable for applications in industrial power, electric vehicle charging, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 357W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 46A |
| Input Capacitance (Ciss) (Max) @ Vds | 5590pF @ 25V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 23A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 123nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP4 |
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