APTM50HM65FTG
MOSFET 4N-CH 500V 51A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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The Microchip Technology APTM50HM65FTG is a 4-N-channel MOSFET array designed for high-power applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 51A at 25°C, with a maximum power dissipation of 390W. The Rds On is specified at 78mOhm maximum at 25.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 140nC maximum at 10V and input capacitance (Ciss) of 7000pF maximum at 25V. The device utilizes MOSFET technology and is housed in an SP4 package for chassis mounting. The operating temperature range is from -40°C to 150°C. This MOSFET array is suitable for use in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 51A |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 25.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP4 |