APTM50HM65FT3G
MOSFET 4N-CH 500V 51A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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The Microchip Technology APTM50HM65FT3G is a 500V, 4-channel N-channel MOSFET array designed for high-power applications. This chassis mount device features a continuous drain current (Id) of 51A at 25°C and a maximum power dissipation of 390W. With a low Rds On of 78mOhm at 25.5A and 10V, it offers efficient switching performance. Key electrical characteristics include a gate charge (Qg) of 140nC at 10V and input capacitance (Ciss) of 7000pF at 25V. The APTM50HM65FT3G is suitable for demanding power conversion and motor drive applications across various industrial sectors. It operates within a temperature range of -40°C to 150°C (TJ) and is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 51A |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 25.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP3 |
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