APTM50HM35FG
MOSFET 4N-CH 500V 99A SP6Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Microchip Technology APTM50HM35FG is a 4 N-Channel MOSFET array designed for high-power applications. This component offers a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 99A at 25°C. The APTM50HM35FG features a low on-resistance of 39mOhm maximum at 49.5A and 10V, with a maximum power dissipation of 781W. Input capacitance (Ciss) is specified at 14000pF maximum at 25V, and gate charge (Qg) is 280nC maximum at 10V. The device utilizes Metal Oxide MOSFET technology and is packaged in an SP6 configuration for chassis mounting. It operates across a temperature range of -40°C to 150°C. This MOSFET array is suitable for use in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 781W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 99A |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 49.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP6 |
Request a Quote
Clients Also Buy
APTC60VDAM24T3G
MOSFET 2N-CH 600V 95A SP3
MSCM20AM058G
MOSFET 2N-CH 200V 280A LP8
MSCSM170HRM11NG
SIC 4N-CH 1700V/1200V 226A
