APTM50H15FT1G
MOSFET 4N-CH 500V 25A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM50H15FT1G is a 4 N-Channel MOSFET array in a Chassis Mount SP1 package. This device features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 25A at 25°C, with a maximum power dissipation of 208W. The Rds On is specified at 180mOhm at 21A and 10V. Key parameters include a Gate Charge (Qg) of 170nC at 10V and an Input Capacitance (Ciss) of 5448pF at 25V. The threshold voltage (Vgs(th)) is a maximum of 5V at 1mA. This component is suitable for applications in power factor correction, electric vehicle power trains, and industrial motor control. It operates within a temperature range of -40°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 208W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Input Capacitance (Ciss) (Max) @ Vds | 5448pF @ 25V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 21A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | SP1 |
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