APTM50H14FT3G
MOSFET 4N-CH 500V 26A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM50H14FT3G is a 4 N-Channel MOSFET array featuring a 500V drain-source breakdown voltage and a continuous drain current capability of 26A at 25°C. This robust component, housed in an SP3 package for efficient chassis mounting, offers a low on-resistance of 168mOhm maximum at 13A and 10V Vgs. With a maximum power dissipation of 208W and a gate charge of 72nC at 10V, the APTM50H14FT3G is engineered for high-performance applications. Its input capacitance (Ciss) is rated at 3259pF maximum at 25V. This MOSFET array is suitable for power factor correction, industrial motor control, and electric vehicle charging systems. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 208W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 26A |
| Input Capacitance (Ciss) (Max) @ Vds | 3259pF @ 25V |
| Rds On (Max) @ Id, Vgs | 168mOhm @ 13A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | SP3 |
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