APTM50H10FT3G
MOSFET 4N-CH 500V 37A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM50H10FT3G is a 4 N-Channel MOSFET array housed in an SP3 package. This device offers a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 37A at 25°C. Key electrical characteristics include a maximum Rds On of 120mOhm at 18.5A and 10V, and a gate charge (Qg) of 96nC at 10V. Input capacitance (Ciss) is rated at a maximum of 4367pF at 25V. The MOSFET operates within a temperature range of -40°C to 150°C (TJ) and supports a maximum power dissipation of 312W. Its chassis mount configuration makes it suitable for applications requiring robust thermal management. This component is commonly utilized in power conversion and motor control systems across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 312W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 37A |
| Input Capacitance (Ciss) (Max) @ Vds | 4367pF @ 25V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 18.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | SP3 |
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