APTM50AM38FTG
MOSFET 2N-CH 500V 90A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM50AM38FTG is a 2 N-Channel POWER MOS 7® MOSFET array designed for high-power applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C. The on-resistance (Rds On) is a maximum of 45mOhm at 45A and 10V. Key parameters include a gate charge (Qg) of 246nC (max) at 10V and input capacitance (Ciss) of 11200pF (max) at 25V. With a maximum power dissipation of 694W, the APTM50AM38FTG is housed in an SP4 package suitable for chassis mounting. This device operates across a temperature range of -40°C to 150°C (TJ). It finds application in power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 694W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 90A |
| Input Capacitance (Ciss) (Max) @ Vds | 11200pF @ 25V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 45A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 246nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP4 |