APTM50AM35FTG
MOSFET 2N-CH 500V 99A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM50AM35FTG is a 500V, 2-channel N-channel MOSFET array designed for high-power applications. This component features a continuous drain current (Id) of 99A at 25°C and a low on-resistance (Rds On) of 39mOhm at 49.5A and 10V Vgs. The device offers a maximum power dissipation of 781W and a gate charge (Qg) of 280nC at 10V. Input capacitance (Ciss) is specified at a maximum of 14000pF at 25V. The APTM50AM35FTG is housed in an SP4 package for chassis mounting and operates within a temperature range of -40°C to 150°C. This MOSFET array is suitable for use in power factor correction, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 781W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 99A |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 49.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP4 |
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