APTM50AM19FG
MOSFET 2N-CH 500V 163A SP6Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM50AM19FG is a 500V, 2-N-Channel MOSFET array designed for high-power applications. This component features a continuous drain current capability of 163A at 25°C and a maximum power dissipation of 1136W, housed in a chassis-mount SP6 package. Key electrical characteristics include a low on-resistance of 22.5mOhm at 81.5A and 10V, and a gate charge of 492nC maximum at 10V. The input capacitance (Ciss) is 22400pF maximum at 25V. Operating across a temperature range of -40°C to 150°C, this MOSFET array is suitable for demanding power conversion circuits in industrial motor control, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1136W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 163A |
| Input Capacitance (Ciss) (Max) @ Vds | 22400pF @ 25V |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 81.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 492nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | SP6 |
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