APTM20HM20FTG
MOSFET 4N-CH 200V 89A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Microchip Technology APTM20HM20FTG is a 4 N-Channel MOSFET array designed for high-power applications. This component offers a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 89A at 25°C. The device features a low on-resistance (Rds On) of 24mOhm at 44.5A and 10V, contributing to efficient power handling. With a maximum power dissipation of 357W and a chassis mount package (SP4), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 112nC at 10V and input capacitance (Ciss) of 6850pF at 25V. The operating temperature range is -40°C to 150°C (TJ). This MOSFET array is utilized in industries such as industrial automation, renewable energy systems, and electric vehicle power conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 357W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 89A |
| Input Capacitance (Ciss) (Max) @ Vds | 6850pF @ 25V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 44.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP4 |