APTM20HM16FTG
MOSFET 4N-CH 200V 104A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM20HM16FTG is a 4 N-Channel MOSFET array designed for high-power applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 104A at 25°C. The array offers a low on-resistance (Rds On) of 19mOhm at 52A and 10V, with a maximum power dissipation of 390W. Key electrical characteristics include a gate charge (Qg) of 140nC and input capacitance (Ciss) of 7220pF. The device is chassis mountable and comes in an SP4 package. Operating temperature ranges from -40°C to 150°C (TJ). This MOSFET array is suitable for applications in electric vehicle powertrains, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 104A |
| Input Capacitance (Ciss) (Max) @ Vds | 7220pF @ 25V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 52A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP4 |