APTM20HM10FG
MOSFET 4N-CH 200V 175A SP6Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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The Microchip Technology APTM20HM10FG is a 200V, 4 N-Channel MOSFET array designed for high-power applications. This component, housed in an SP6 chassis mount package, offers a continuous drain current of 175A per channel at 25°C, with a maximum power dissipation of 694W. Key electrical characteristics include a low on-resistance of 12mOhm at 87.5A and 10V, and a gate charge (Qg) of 224nC at 10V. Input capacitance (Ciss) is rated at 13700pF at 25V. The device operates across a temperature range of -40°C to 150°C. This MOSFET array is suitable for demanding power conversion and control systems in electric vehicle powertrains, industrial motor drives, and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 694W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 175A |
| Input Capacitance (Ciss) (Max) @ Vds | 13700pF @ 25V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 87.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 224nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP6 |
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