APTM20HM08FG
MOSFET 4N-CH 200V 208A SP6Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM20HM08FG is a 4 N-Channel MOSFET array designed for high-power applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 208A at 25°C, with a maximum power dissipation of 781W. The on-resistance (Rds On) is a low 10mOhm at 104A and 10V. With a gate charge (Qg) of 280nC at 10V and input capacitance (Ciss) of 14400pF at 25V, it offers efficient switching characteristics. The APTM20HM08FG is housed in an SP6 package designed for chassis mounting, ensuring robust thermal management. This device operates across a wide temperature range of -40°C to 150°C (TJ). It is utilized in industries requiring high-efficiency power conversion and management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 781W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 208A |
| Input Capacitance (Ciss) (Max) @ Vds | 14400pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 104A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP6 |
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