APTM20AM08FTG
MOSFET 2N-CH 200V 208A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM20AM08FTG is a 2 N-channel MOSFET array designed for high-power applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 208A at 25°C. The on-resistance (Rds On) is a maximum of 10mOhm at 104A and 10V gate-source voltage. With a maximum power dissipation of 781W and a chassis mount package (SP4), this device is suitable for demanding industrial and automotive systems. Key parameters include a gate charge (Qg) of 280nC at 10V and input capacitance (Ciss) of 14400pF at 25V. The operating temperature range is -40°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 781W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 208A |
| Input Capacitance (Ciss) (Max) @ Vds | 14400pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 104A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP4 |