APTM120H29FG
MOSFET 4N-CH 1200V 34A SP6Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM120H29FG is a 4 N-channel MOSFET array from the POWER MOS 7® series. This device features a 1200V (1.2kV) drain-source voltage (Vdss) and a continuous drain current (Id) of 34A at 25°C, with a maximum power dissipation of 780W. The on-resistance (Rds On) is 348mOhm at 17A and 10V. Key parameters include a gate charge (Qg) of 374nC at 10V and an input capacitance (Ciss) of 10300pF at 25V. The threshold voltage (Vgs(th)) is 5V at 5mA. This component is designed for chassis mounting and operates within a temperature range of -40°C to 150°C. It is commonly utilized in high-voltage power conversion applications across industries such as industrial automation, electric vehicles, and renewable energy systems. The package style is SP6 and it is supplied in Bulk packaging.
Additional Information
Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 780W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 34A |
| Input Capacitance (Ciss) (Max) @ Vds | 10300pF @ 25V |
| Rds On (Max) @ Id, Vgs | 348mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 374nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP6 |
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