APTM120A29FTG
MOSFET 2N-CH 1200V 34A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Microchip Technology APTM120A29FTG is a 1200V (1.2kV) 2 N-Channel MOSFET array, configured as a half-bridge. This chassis-mount component delivers up to 34A continuous drain current at 25°C, with a maximum power dissipation of 780W. Key electrical parameters include a Vgs(th) of 5V at 5mA, a maximum Rds(On) of 348mOhm at 17A and 10V, and an input capacitance (Ciss) of 10300pF at 25V. Gate charge (Qg) is specified at 374nC at 10V. The device operates across a temperature range of -40°C to 150°C (TJ) and is supplied in Bulk packaging within the SP4 case. This MOSFET array is suitable for applications in industrial power supplies, electric vehicle powertrains, and renewable energy systems requiring high voltage and current handling capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 780W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 34A |
| Input Capacitance (Ciss) (Max) @ Vds | 10300pF @ 25V |
| Rds On (Max) @ Id, Vgs | 348mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 374nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP4 |
Request a Quote
Clients Also Buy
APTM20HM08FG
MOSFET 4N-CH 200V 208A SP6
MSCSM120AM042CT6LIAG
SIC 2N-CH 1200V 495A SP6C LI
APTMC120AM12CT3AG
SIC 2N-CH 1200V 220A SP3
